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PRELIMINARY
CY7C1338G
4-Mbit (128K x 32) Flow-Through Sync SRAM
Features
* * * * 128K X 32 common I/O 3.3V -5% and +10% core power supply (VDD) 2.5V or 3.3V I/O supply (VDDQ) Fast clock-to-output times -- 6.5 ns (133-MHz version) -- 7.5 ns (117-MHz version) -- 8.0 ns (100-MHz version) Provide high-performance 2-1-1-1 access rate User-selectable burst counter supporting Intel(R) Pentium(R) interleaved or linear burst sequences Separate processor and controller address strobes Synchronous self-timed write Asynchronous output enable Lead-Free 100-pin TQFP and 119-ball BGA packages "ZZ" Sleep Mode option
Functional Description[1]
The CY7C1338G is a 131,072 x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. The CY7C1338G allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). The CY7C1338G operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.
* * * * * * *
Logic Block Diagram
A0, A1, A
ADDRESS REGISTER A[1:0]
MODE
ADV CLK
BURST Q1 COUNTER AND LOGIC Q0 CLR
ADSC ADSP DQD BYTE BWD WRITE REGISTER DQD BYTE WRITE REGISTER
BWC
DQC BYTE WRITE REGISTER
DQC BYTE WRITE REGISTER
DQB BYTE BWB DQB BYTE WRITE REGISTER DQA BYTE BWA BWE GW CE1 CE2 CE3 OE DQA BYTE WRITE REGISTER WRITE REGISTER WRITE REGISTER
MEMORY ARRAY
SENSE AMPS
OUTPUT BUFFERS
DQs
ENABLE REGISTER
INPUT REGISTERS
ZZ
SLEEP CONTROL
Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation Document #: 38-05521 Rev. *A
*
3901 North First Street
*
San Jose, CA 95134 * 408-943-2600 Revised October 21, 2004
PRELIMINARY
Selection Guide
Maximum Access Time Maximum Operating Current Maximum Standby Current 133 MHz 6.5 225 40 117 MHz 7.5 220 40
CY7C1338G
100 MHz 8.0 205 40 Unit ns mA mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Pin Configurations
100-Pin TQFP
BWD BWC BWB BWA CE3 CE1 VDD VSS OE ADSC ADSP ADV 86 85 84 83 CE2 CLK GW BWE
A
A 82
A
99
98
97
96
95
94
93
92
91
90
89
88
87
NC DQC DQC VDDQ VSSQ DQC DQC BYTE C DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC
BYTE D
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
100
81
A
CY7C1338G
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 44 45 46 47 48 49 50
NC DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA NC BYTE B
BYTE A
38
39
40
41 VDD
42
MODE A
VSS
NC NC A A
NC NC
A1
A0
A
A
A
43
A A
A
A
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PRELIMINARY
Pin Configurations (continued)
119-Ball BGA 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD NC NC VDDQ 2 A CE2 A NC DQC DQC DQC DQC VDD DQD DQD DQD DQD NC A NC NC 3 A A A VSS VSS VSS BWC VSS NC VSS BWD VSS VSS VSS MODE A NC 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD A NC 5 A A A VSS VSS VSS BWB VSS NC VSS BWA VSS VSS VSS NC A NC 6 A NC A NC DQB DQB DQB DQB VDD DQA DQA DQA DQA NC A NC NC 7 VDDQ NC NC DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA NC ZZ VDDQ
CY7C1338G
Pin Definitions
Name A0, A1, A I/O Description InputAddress Inputs used to select one of the 128K address locations. Sampled at the rising edge Synchronous of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. InputByte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Synchronous Sampled on the rising edge of CLK. InputGlobal Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Synchronous write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE). InputByte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be Synchronous asserted LOW to conduct a byte write. Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. InputChip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is loaded. InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with Synchronous CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is loaded. InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When Asynchronous LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputAdvance Input signal, sampled on the rising edge of CLK. When asserted, it automatically Synchronous increments the address in a burst cycle.
BWA,BWB BWC,BWD GW BWE CLK CE1
CE2
CE3
OE
ADV
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PRELIMINARY
Pin Definitions (continued)
Name ADSP I/O Description
CY7C1338G
ADSC
InputAddress Strobe from Processor, sampled on the rising edge of CLK, active LOW. When Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH InputAddress Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. InputZZ "sleep" Input, active HIGH. When asserted HIGH places the device in a non-time-critical "sleep" Asynchronous condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. I/OBidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by Synchronous the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed in a tri-state condition. Power Supply Ground Power supply inputs to the core of the device. Ground for the core of the device.
ZZ
DQs
VDD VSS VDDQ VSSQ MODE
I/O Power Power supply for the I/O circuitry. Supply I/O Ground Ground for the I/O circuitry. InputStatic Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. No Connects. Not Internally connected to the die. Single Read Accesses A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deasserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter/control logic and presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs a maximum to tCDV after clock rise. ADSP is ignored if CE1 is HIGH. Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BWE, and BW[A:D])are ignored during this first clock cycle. If the write inputs are asserted active (see Write Cycle Descriptions table for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. Byte writes are allowed. During byte writes, BWA controls DQA and BWB controls DQB. BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated during a byte write.Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE.
NC
Functional Overview
All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (t C0) is 6.5 ns (133-MHz device). The CY7C1338G supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium(R) and i486TM processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user-selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH.
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PRELIMINARY
Single Write Accesses Initiated by ADSC This write access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, (2) ADSC is asserted LOW, (3) ADSP is deasserted HIGH, and (4) the write input signals (GW, BWE, and BW[A:D]) indicate a write access. ADSC is ignored if ADSP is active LOW. The addresses presented are loaded into the address register and the burst counter/control logic and delivered to the memory core. The information presented to DQ[A:D] will be written into the specified address location. Byte writes are allowed. During byte writes, BWA controls DQA, BWB controls DQB, BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated when a write is detected, even a byte write. Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1338G provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A[1:0], and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence. A HIGH on MODE will select an interleaved burst order. Leaving MODE unconnected will cause the device to default to a interleaved burst sequence. Sleep Mode
CY7C1338G
The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table (MODE = Floating or VDD)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 00 11 10 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 10 01 00
Linear Burst Address Table (MODE = GND)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 10 11 00 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 00 01 10
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Snooze mode standby current Device operation to ZZ ZZ recovery time ZZ active to snooze current ZZ Inactive to exit snooze current Test Conditions ZZ > VDD - 0.2V ZZ > VDD - 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled 0 2tCYC 2tCYC Min. Max. 40 2tCYC Unit mA ns ns ns ns
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PRELIMINARY
Truth Table [2, 3, 4, 5, 6]
Cycle Description Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Deselected Cycle, Power-down Snooze Mode, Power-down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst
CY7C1338G
Address Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK None None None None None None External External External External External Next Next Next Next Next Next Current Current Current Current Current Current H L L L X X L L L L L X X H H X H X X H H X H X L X L X X H H H H H X X X X X X X X X X X X X X H X X X L L L L L X X X X X X X X X X X X L L L L L H L L L L L L L L L L L L L L L L L X L L H H X L L H H H H H X X H X H H X X H X L X X L L X X X L L L H H H H H H H H H H H H X X X X X X X X X X X L L L L L L H H H H H H X X X X X X X X L H H H H H H L L H H H H L L X X X X X X L H X L H L H L H X X L H L H X X
DQ
L-H tri-state L-H tri-state L-H tri-state L-H tri-state L-H tri-state X tri-state L-H Q L-H tri-state L-H D L-H Q L-H tri-state L-H Q L-H tri-state L-H Q L-H tri-state L-H D L-H D L-H Q L-H tri-state L-H Q L-H tri-state L-H D L-H D
Notes: 2. X = "Don't Care." H = Logic HIGH, L = Logic LOW. 3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals (BWA, BWB, BWC, BWD), BWE, GW = H. 4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
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PRELIMINARY
Partial Truth Table for Read/Write[2, 7]
Function Read Read Write Byte A Write Byte B Write Bytes B, A Write Byte C Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C, A Write All Bytes Write All Bytes GW H H H H H H H H H H H H H H H H H L BWE H L L L L L L L L L L L L L L L L X BWD X H H H H H H H H L L L L L L L L X BWC X H H H H L L L L H H H H L L L L X
CY7C1338G
BWB X H H L L H H L L H H L L H H L L X
BWA X H L H L H L H L H L H L H L H L X
Note: 7. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active.
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PRELIMINARY
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VDD Relative to GND........ -0.5V to +4.6V DC Voltage Applied to Outputs in tri-state ............................................ -0.5V to VDDQ + 0.5V DC Input Voltage....................................-0.5V to VDD + 0.5V
CY7C1338G
Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA
Operating Range
Range Commercial Industrial Ambient Temperature] 0C to +70C -40C to +85C VDD VDDQ
3.3V -5%/+10% 2.5V -5% to VDD
Electrical Characteristics Over the Operating Range [8, 9]
Parameter Description VDD Power Supply Voltage VDDQ I/O Supply Voltage Output HIGH Voltage VOH VOL VIH VIL IX Test Conditions CY7C1338G Min. Max. Unit 3.135 3.6 V 2.375 VDD V 2.4 V 2.0 V 0.4 V 0.4 V 2.0 VDD + 0.3V V 1.7 VDD + 0.3V V -0.3 0.8 V -0.3 0.7 V -5 5 A -30 5 -5 -5 30 5 -300 225 220 205 90 85 80 40 A A A A A A mA mA mA mA mA mA mA
IOZ IOS IDD
ISB1
ISB2
ISB3
ISB4
VDDQ = 3.3V, VDD = Min., IOH = -4.0 mA VDDQ = 2.5V, VDD = Min., IOH = -1.0 mA Output LOW Voltage VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA Input HIGH Voltage VDDQ = 3.3V VDDQ = 2.5V Input LOW Voltage[8] VDDQ = 3.3V VDDQ = 2.5V Input Load Current (except ZZ and GND VI VDDQ MODE) Input Current of MODE Input = VSS Input = VDD Input Current of ZZ Input = VSS Input = VDD Output Leakage Current GND VI VDD, Output Disabled Output Short Circuit Current VDD = Max., VOUT = GND VDD Operating Supply Current VDD = Max., IOUT = 0 mA, 7.5-ns cycle, 133 MHz f = fMAX= 1/tCYC 8.0-ns cycle, 117 MHz 10-ns cycle, 100 MHz Automatic CE Power-Down Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz Current--TTL Inputs VIN VIH or VIN VIL, f = fMAX, 8.0-ns cycle, 117 MHz inputs switching 10-ns cycle, 100 MHz Automatic CE Power-Down Max. VDD, Device Deselected, All speeds Current--CMOS Inputs VIN VDD - 0.3V or VIN 0.3V, f = 0, inputs static Automatic CE Power-Down Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz Current--CMOS Inputs VIN VDDQ - 0.3V or VIN 0.3V, 8.0-ns cycle, 117 MHz f = fMAX, inputs switching 10-ns cycle, 100 MHz Automatic CE Power-Down Max. VDD, Device Deselected, All speeds Current--TTL Inputs VIN VDD - 0.3V or VIN 0.3V, f = 0, inputs static
75 70 65 45
mA mA mA mA
Shaded areas contain advance information. Notes: 8. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2). 9. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.
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PRELIMINARY
Thermal Resistance[10]
Parameter JA JC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. TQFP Package TBD TBD
CY7C1338G
BGA Package TBD TBD Unit C/W C/W
Capacitance[10]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V. VDDQ = 3.3V TQFP Package 5 5 5 BGA Package Unit 5 5 7 pF pF pF
AC Test Loads and Waveforms
3.3V I/O Test Load
OUTPUT Z0 = 50 3.3V OUTPUT RL = 50 5 pF R = 351 R = 317 ALL INPUT PULSES VDDQ 10% GND 1ns 90% 90% 10% 1ns
VT = 1.5V
2.5V I/O Test Load
OUTPUT Z0 = 50
(a)
INCLUDING JIG AND SCOPE 2.5V
(b)
R = 1667 VDDQ 10%
(c)
ALL INPUT PULSES 90% 90% 10% 1ns
OUTPUT RL = 50 5 pF R =1538 VT = 1.25V INCLUDING JIG AND SCOPE
GND 1ns
(a)
(b)
(c)
Switching Characteristics Over the Operating Range [11, 12, 13, 14, 15, 16]
133 MHz Parameter tPOWER Clock tCYC tCH tCL Output Times tCDV tDOH Data Output Valid After CLK Rise Data Output Hold After CLK Rise 2.0 6.5 2.0 7.5 2.0 8.0 ns ns Clock Cycle Time Clock HIGH Clock LOW 7.5 2.5 2.5 8.5 3.0 3.0 10 4.0 4.0 ns ns ns Description VDD(Typical) to the first Access[11] Min. 1 Max. 117 MHz Min. 1 Max. 100 MHz Min. 1 Max. Unit ms
Shaded areas contain advance information. Notes: 10. Tested initially and after any design or process change that may affect these parameters. 11. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 12. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 13. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 14. This parameter is sampled and not 100% tested. 15. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
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PRELIMINARY
Switching Characteristics Over the Operating Range (continued)[11, 12, 13, 14, 15, 16]
133 MHz Parameter tCLZ tCHZ tOEV tOELZ tOEHZ Setup Times tAS tADS tADVS tWES tDS tCES Hold Times tAH tADH tWEH tADVH tDH tCEH Address Hold After CLK Rise ADSP, ADSC Hold After CLK Rise GW,BWE, BWX Hold After CLK Rise ADV Hold After CLK Rise Data Input Hold After CLK Rise Chip Enable Hold After CLK Rise 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Address Set-up Before CLK Rise ADSP, ADSC Set-up Before CLK Rise ADV Set-up Before CLK Rise GW, BWE, BWX Set-up Before CLK Rise Data Input Set-up Before CLK Rise Chip Enable Set-up 1.5 1.5 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 1.5 2.0 Clock to Low-Z Description
[12, 13, 14]
CY7C1338G
117 MHz Min. 0 3.5 3.5 0 3.5 0 3.5 2.0 2.0 2.0 2.0 1.5 2.0 0.5 0.5 0.5 0.5 0.5 0.5 3.5 3.5 0 3.5 Max. 100 MHz Min. 0 3.5 3.5 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Min. 0
Max.
Clock to High-Z[12, 13, 14] OE LOW to Output Valid OE LOW to Output Low-Z[12, 13, 14] OE HIGH to Output High-Z[12, 13, 14]
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PRELIMINARY
Timing Diagrams
Read Cycle Timing[17]
tCYC
CY7C1338G
CLK
t
CH
t CL
tADS
tADH
ADSP
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
t WES t WEH
A2
GW, BWE,BW
[A:D] tCES t CEH
Deselect Cycle
CE
t ADVS t ADVH
ADV ADV suspends burst. OE
t OEV t CLZ t OEHZ t OELZ
tCDV tDOH t CHZ
Data Out (Q)
High-Z
Q(A1)
t CDV
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Burst wraps around to its initial state
Single READ DON'T CARE
BURST READ UNDEFINED
Note: 17. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
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PRELIMINARY
Timing Diagrams (continued)
Write Cycle Timing[17, 18]
t CYC
CY7C1338G
CLK
t
CH
t
CL
tADS
tADH
ADSP
tADS tADH
ADSC extends burst
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
A2
Byte write signals are ignored for first cycle when ADSP initiates burst
A3
tWES tWEH
BWE, BW[A:D]
t t WES WEH
GW
tCES tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t DS t DH D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2)
Data in (D)
High-Z
t OEHZ
D(A1)
Data Out (Q) BURST READ Single WRITE BURST WRITE Extended BURST WRITE
DON'T CARE
UNDEFINED
Note: 18. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW.
Document #: 38-05521 Rev. *A
Page 12 of 17
PRELIMINARY
Timing Diagrams (continued)
Read/Write Timing[17, 19, 20]
tCYC
CY7C1338G
CLK
t CH tADS tADH
t CL
ADSP
ADSC
tAS tAH
ADDRESS
A1
A2
A3
t t WES WEH
A4
A5
A6
BWE, BW[A:D]
tCES tCEH
CE
ADV
OE
tDS tDH tOELZ
Data In (D) Data Out (Q)
High-Z
t OEHZ
D(A3)
tCDV
D(A5)
D(A6)
Q(A1)
Q(A2) Single WRITE DON'T CARE
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3) Back-to-Back WRITEs
Back-to-Back READs
BURST READ UNDEFINED
Notes: 19. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 20. GW is HIGH.
Document #: 38-05521 Rev. *A
Page 13 of 17
PRELIMINARY
Timing Diagrams (continued)
ZZ Mode Timing [21, 22]
CLK
t ZZ t ZZREC
CY7C1338G
ZZ
t ZZI
I
SUPPLY I DDZZ t RZZI DESELECT or READ Only
ALL INPUTS (except ZZ)
Outputs (Q)
High-Z
DON'T CARE
Ordering Information
Speed (MHz) 133 Ordering Code CY7C1338G-133AXC CY7C1338G-133BGC CY7C1338G-133BGXC CY7C1338G-133AXI CY7C1338G-133BGI CY7C1338G-133BGXI 117 CY7C1338G-117AXC CY7C1338G-117BGC CY7C1338G-117BGXC CY7C1338G-117AXI CY7C1338G-117BGI CY7C1338G-117BGXI 100 CY7C1338G-100AXC CY7C1338G-100BGC CY7C1338G-100BGXC CY7C1338G-100AXI CY7C1338G-100BGI CY7C1338G-100BGXI Package Name A101 BG119 BG119 A101 BG119 BG119 A101 BG119 BG119 A101 BG119 BG119 A101 BG119 BG119 A101 BG119 BG119 Package Type Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 119-Ball PBGA (14 x 22 x 2.4mm) Lead-Free 119-Ball PBGA (14 x 22 x 2.4mm) Industrial Commercial Industrial Commercial Industrial Operating Range Commercial
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Lead-Free BGX package will be available in 2005. Notes: 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 22. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05521 Rev. *A
Page 14 of 17
PRELIMINARY
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
16.000.20 14.000.10
100 1 81 80
CY7C1338G
DIMENSIONS ARE IN MILLIMETERS.
1.400.05
0.300.08
22.000.20
20.000.10
0.65 TYP.
30 31 50 51
121 (8X)
SEE DETAIL
A
0.20 MAX. R 0.08 MIN. 0.20 MAX. 0 MIN. STAND-OFF 0.05 MIN. 0.15 MAX.
0.10
1.60 MAX.
0.25 GAUGE PLANE
SEATING PLANE
0-7
R 0.08 MIN. 0.20 MAX.
0.600.15 0.20 MIN. 1.00 REF.
DETAIL
A
51-85050-*A
Document #: 38-05521 Rev. *A
Page 15 of 17
PRELIMINARY
Package Diagrams (continued)
119-Lead PBGA (14 x 22 x 2.4 mm) BG119
CY7C1338G
51-85115-*B
Intel and Pentium are registered trademarks of Intel Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05521 Rev. *A
Page 16 of 17
(c) Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
PRELIMINARY
Document History Page
Document Title: CY7C1338G 4-Mbit (128K x 32) Flow-Through Sync SRAM Document Number: 38-05521 REV. ** *A ECN NO. 224369 278513 Issue Date See ECN See ECN Orig. of Change RKF VBL New data sheet Description of Change
CY7C1338G
Deleted 66 MHz Changed TQFP to PB-Free TQFP in Ordering Info section Added PB-Free BG package
Document #: 38-05521 Rev. *A
Page 17 of 17

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